Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor

ABSTRACT

A circuit and method for a memory cell with a vertical transistor and a trench capacitor. The cell includes an access transistor that is formed in a pillar of a single crystal semiconductor material. The transistor has vertically aligned first and second source/drain regions and a body region. The transistor also includes a gate that is formed along a side of the pillar. A trench capacitor is also included in the cell. A first plate of the trench capacitor is formed integral with the first source/drain region. A second plate is disposed adjacent to the first plate and separated from the first plate by a gate oxide.

TECHNICAL FIELD OF THE INVENTION

The present invention relates generally to the field of memory devicesand, in particular, to a circuit and method for an open bit line memorycell with a vertical transistor and trench plate trench capacitor.

BACKGROUND OF THE INVENTION

Electronic systems typically store data during operation in a memorydevice. In recent years, the dynamic random access memory (DRAM) hasbecome a popular data storage device for such systems. Basically, a DRAMis an integrated circuit that stores data in binary form (e.g., “1” or“0”) in a large number of cells. The data is stored in a cell as acharge on a capacitor located within the cell. Typically, a high logiclevel is approximately equal to the power supply voltage and a low logiclevel is approximately equal to ground.

The cells of a conventional DRAM are arranged in an array so thatindividual cells can be addressed and accessed. The array can be thoughtof as rows and columns of cells. Each row includes a word line thatinterconnects cells on the row with a common control signal. Similarly,each column includes a bit line that is coupled to at most one cell ineach row. Thus, the word and bit lines can be controlled so as toindividually access each cell of the array.

A memory array is typically implemented as an integrated circuit on asemiconductor substrate in one of a number of conventional layouts. Onesuch layout is referred to as an “open digit line” architecture. In thisarchitecture, the array is divided into at least two separate parts or“sub-arrays.” Each sub-array includes a number of rows and columns ofmemory cells. Each memory cell in a row is coupled to a common word lineand each transistor in a column is coupled to a common bit line. Eachbit line in the first sub-array is paired with a bit line in the secondsub-array so as to feed into a common sense amplifier. The senseamplifier detects and amplifies differences in voltage on a pair of bitlines as described in more detail below.

To read data out of a cell, the capacitor of a cell is accessed byselecting the word line associated with the cell. A complementary bitline that is paired with the bit line for the selected cell isequilibrated with the voltage on the bit line for the selected cell. Theequilibration voltage is typically midway between the high and low logiclevels. Thus, conventionally, the bit lines are equilibrated to one-halfof the power supply voltage, V_(cc)/2. When the word line is activatedfor the selected cell, the capacitor of the selected cell discharges thestored voltage onto the bit line, thus changing the voltage on the bitline.

The sense amplifier detects and amplifies the difference in voltage onthe pair of bit lines. The sense amplifier typically includes two maincomponents: an n-sense amplifier and a p-sense amplifier. The n-senseamplifier includes a cross-coupled pair of n-channel transistors thatdrive the low bit line to ground. The p-sense amplifier includes across-coupled pair of p-channel transistors and is used to drive thehigh bit line to the power supply voltage.

An input/output device for the array, typically an n-channel transistor,passes the voltage on the bit line for the selected cell to aninput/output line for communication to, for example, a processor of acomputer or other electronic system associated with the DRAM. In a writeoperation, data is passed from the input/output lines to the bit linesby the input/output device of the array for storage on the capacitor inthe selected cell.

Each of the components of a memory device are conventionally formed aspart of an integrated circuit on a “chip” or wafer of semiconductormaterial. One of the limiting factors in increasing the capacity of amemory device is the amount of surface area of chip used to form eachmemory cell. In the industry terminology, the surface area required fora memory cell is characterized in terms of the minimum feature size,“F,” that is obtainable by the lithography technology used to form thememory cell. Conventionally, the memory cell is laid out with atransistor that includes first and second source/drain regions separatedby a body or gate region that are disposed horizontally along a surfaceof the chip. When isolation between adjacent transistors is considered,the surface area required for such a transistor is generally 8F² or 6F².

Some researchers have proposed using a vertical transistor in the memorycell in order to reduce the surface area of the chip required for thecell. Each of these proposed memory cells, although smaller in size fromconventional cells, fails to provide adequate operationalcharacteristics when compared to more conventional structures. Forexample, U.S. Pat. No. 4,673,962 (the '962 Patent) issued to TexasInstruments on Jun. 16, 1997. The '962 Patent discloses the use of athin poly-silicon field effect transistor (FET) in a memory cell. Thepoly-silicon FET is formed along a sidewall of a trench which runsvertically into a substrate. At a minimum, the poly-silicon FET includesa junction between poly-silicon channel (58) and the bit line (20) asshown in FIG. 3 of the '962 Patent. Unfortunately, this junction isprone to charge leakage and thus the poly-silicon FET may haveinadequate operational qualities to control the charge on the storagecapacitor. Other known disadvantages of such thin film poly-silicondevices may also hamper the operation of the proposed cell.

Other researchers have proposed use of a “surrounding gate transistor”in which a gate or word line completely surrounds a vertical transistor.See, e.g., Impact of a Vertical Φ-shape transistor (VΦT) Cell for 1 GbitDRAM and Beyond, IEEE Trans. On Elec. Devices, Vol 42, No.12, December,1995, pp. 2117-2123. Unfortunately, these devices suffer from problemswith access speed due to high gate capacitance caused by the increasedsurface area of the gate which slows down the rise time of the wordlines. Other vertical transistor cells include a contact between thepass transistor and a poly-silicon plate in the trench. Such verticaltransistor cells are difficult to implement due to the contact andshould produce a low yield.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art forrealizable memory cell that uses less surface area than conventionalmemory cells.

SUMMARY OF THE INVENTION

The above mentioned problems with memory cells and other problems areaddressed by the present invention and which will be understood byreading and studying the following specification. A memory cell isdescribed which includes a vertical transistor and trench capacitor.

In particular, an illustrative embodiment of the present inventionincludes a memory cell. The memory cell includes an access transistorformed in the pillar of single crystal semiconductor material. Thetransistor has first and second source/drain regions and a body regionthat are vertically aligned. The transistor also includes a gate that isdisposed adjacent to a side of the pillar. The memory cell also includesa trench capacitor. The trench capacitor includes a first plate that isformed integral with the first source/drain region of the accesstransistor. A second plate of the trench capacitor is disposed adjacentto the first plate and separated from the first plate by a gate oxide.In another embodiment, the second plate of the trench capacitorsurrounds the second source/drain region. In a further embodiment, thesecond plate comprises poly-silicon. In another embodiment, an ohmiccontact couples the second plate to a layer of semiconductor material.

In another embodiment, a memory device is provided that includes anarray of memory cells. Each cell of the array includes a vertical accesstransistor formed of a semiconductor pillar that extends outwardly froma substrate with body and first and second source/drain regions. Thegate is disposed adjacent to the side of the pillar adjacent to the bodyregion. Each memory cell also includes a trench capacitor wherein afirst plate of the trench capacitor is integral with the firstsource/drain region, the second plate of the trench capacitor isdisposed adjacent to the first plate. The memory device also includes anumber of bit lines that are each selectively coupled to a number of thememory cells at the second source/drain region of the access transistorso as to form columns of memory cells. A number of word lines are alsoprovided with the memory device. The word lines are orthogonal to thebit lines in a trench between rows of the memory cells. The word linesare used to address gates of the access transistors of the memory cellsthat are adjacent to the word line. Finally, the memory device includesaddressing circuitry that is coupled to the word lines and bit lines soas to selectively access the cells of the array. In another embodiment,the surface area of each memory cell is substantially equal to foursquare minimum feature size (4F²) wherein F refers to the minimumfeature size for the lithographic process used to form the memory cell.In another embodiment, the pillar has a sub-micron width so as to allowsubstantially full depletion of the body region. In another embodiment,the word lines are sub-lithographic.

In another embodiment, a memory array is provided. The memory arrayincludes an array of memory cells. Each memory cell includes an accesstransistor having body and first and second source/drain regionsvertically formed outwardly from a substrate and a single crystallinesemiconductor pillar. Also, a gate is disposed adjacent to a side of thetransistor. The second source/drain region includes an uppersemiconductor surface. The memory array also includes a number of wordlines that interconnect gates of selected access transistors so as toform a number of rows of memory cells. Further, the array includes anumber of first isolation trenches separating adjacent rows of memorycells. Each isolation trench houses a word line. Finally, the memoryarray includes a number of second isolation trenches that are eachsubstantially orthogonal to the first isolation trenches and interposedbetween adjacent memory cells so as to form a number of rows of thearray.

In another embodiment, a method of fabricating a memory array isprovided. The method begins by forming a number of access transistors.Each access transistor is formed in a pillar of semiconductor materialthat extends outwardly from a substrate. The access transistor includesa first source/drain region, a body region and a second source/drainregion formed vertically thereupon. The method also provides for forminga trench capacitor for each access transistor. The first plate of thetrench capacitor is integral with the first source/drain region of theaccess transistor. A number of word lines are formed that interconnectthe gates of a number of access transistors to form a row of the array.The word lines are disposed from the number of trenches that separateadjacent rows of the access transistors. Finally, the method providesfor forming a number of bit lines that interconnect second source/drainregions of selected access transistors so as to form a number of columnsof the array. In another embodiment, the method provides for forming atrench capacitor by forming a second plate that surrounds the firstplate. In another embodiment, the method includes the step of forming acontact that couples a second plate of the trench capacitor to anunderlying semiconductor layer. In another embodiment, the methodprovides forming a second plate that forms a grid pattern in a layer ofsemiconductor material such that the grid surrounds each of the pillarsthat forms the access transistors. In another embodiment, the methodfurther provides depositing poly-silicon in crossing row and isolationtrenches formed around the pillars that define the access transistors.

In another embodiment, a method of fabricating a memory array isprovided. Initially, a first conductivity type first source/drain regionlayer is formed on a substrate. Additionally, a second conductivity typebody region layer is formed on the first source/drain layer. A firstconductivity type second source/drain region layer is formed on the bodyregion layer. A number of substantially parallel column isolationtrenches are formed so as to extend through the second source/drainregion layer, the body region layer, and the first source/drain regionlayer so as to form column bars between the column isolation trenches.Additionally, a number of substantially parallel row isolation trenchesare formed orthogonal to the column isolation trenches and extending tosubstantially the same depth as the column isolation trenches. These rowisolation trenches form an array of vertical access transistors for thememory array. The row and column isolation trenches are filled withconductive material to a level that does not exceed the lower level ofthe body region so as to provide a common plate for the capacitors ofmemory cells of the memory array. Conductive word lines are formed inthe row isolation trenches that selectively interconnect accesstransistors on each row. Finally, bit lines are formed that selectivelyinterconnect the second source/drain regions of the access transistorsin each column.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block/schematic diagram of an illustrative embodiment of thepresent invention that includes a memory device that is coupled to anelectronic system;

FIG. 2 is a plan view of an illustrative embodiment of a layout for amemory array according to the teachings of the present invention;

FIG. 3 is a perspective view of the illustrative embodiment of FIG. 2;

FIG. 4 is a schematic diagram of a memory cell of the embodiment ofFIGS. 2 and 3; and

FIGS. 5A through 5J are perspective and elevational views of anembodiment of an integrated circuit that illustrate processing steps forfabricating the integrated circuit according to the teachings of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description of the invention, reference ismade to the accompanying drawings which form a part hereof, and in whichis shown, by way of illustration, specific embodiments in which theinvention may be practiced. The embodiments are intended to describeaspects of the invention in sufficient detail to enable those skilled inthe art to practice the invention. Other embodiments may be utilized andlogical, mechanical and electrical changes may be made without departingfrom the scope of the present invention. The following detaileddescription is, therefore, not to be taken in a limiting sense.

In the following description, the terms wafer and substrate areinterchangeably used to refer generally to any structure on whichintegrated circuits are formed, and also to such structures duringvarious stages of integrated circuit fabrication. Both terms includedoped and undoped semiconductors, epitaxial layers of a semiconductor ona supporting semiconductor or insulating material, combinations of suchlayers, as well as other such structures that are known in the art.

The term “horizontal” as used in this application is defined as a planeparallel to the conventional plane or surface of a wafer or substrate,regardless of the orientation of the wafer or substrate. The term“vertical” refers to a direction perpendicular to the horizonal asdefined above. Prepositions, such as “on”, “side” (as in “sidewall”),“higher”, “lower”, “over” and “under” are defined with respect to theconventional plane or surface being on the top surface of the wafer orsubstrate, regardless of the orientation of the wafer or substrate.

FIG. 1 is a block/schematic diagram that illustrates generally oneembodiment of a memory device 100 incorporating an array of memory cellsconstructed according to the teachings of the present invention. Memorydevice 100 is coupled to electronic system 101. Electronic system 101may comprise, for example, a microprocessor, a memory controller, a chipset or other appropriate electronic system. Memory device 100illustrates, by way of example but not by way of limitation, a dynamicrandom access memory (DRAM), in an open bit line configuration. Memorydevice 100 includes memory arrays 110A and 110B. Each array includes Nrows and M columns of memory cells 112-ij, where i refers to the row ofthe cell and j refers to the column of the cell.

In the exemplary embodiment of FIG. 1, each of memory cells 112-ij has asubstantially identical structure, and accordingly, only one memory cellis described herein. These memory cells 112-ij include a verticaltransistor where one plate of a capacitor is integral with thetransistor. Memory cell 112-11 includes vertical transistor 130-11. Asource/drain region of transistor 130-11 is formed in a deep trench andextends to a sufficient depth to form a storage node of storagecapacitor 132-11. The other terminal of storage capacitor 132-11 is partof a mesh or grid of poly-silicon that surrounds the source/drain regionof transistor 130-11 and is coupled to ground potential.

Each of the N rows of memory cells includes one of word lines WL-1through WL-N that is formed in a trench separating adjacent rows ofmemory cells 112-ij. Portions of word lines WL-1 through WL-N adjacentto transistors 130-ij act as gate regions for the respectivetransistors. Each of the M columns includes one of bit lines BL-1through BL-M.

Bit lines BL-1 through BL-M are used to write to and read data frommemory cells 112-ij. Word lines WL-1 through WL-N are used to access aparticular row of memory cells 112-ij that is to be written or read.Addressing circuitry is also included. For example, address buffer 114is coupled to control column decoder 118, which also includes senseamplifiers and input/output circuitry that is coupled to bit lines BL-1through BL-M of arrays 110A and 110B. Address buffer 114 also is coupledto control row decoders 116A and 116B. Row decoders 116A and B andcolumn decoder 118 selectably access memory cells 112-ij in response toaddress signals that are provided on address lines 120 from electronicsystem 101 during write and read operations.

In operation, memory 100 receives an address of a particular memory cellat address buffer 114. For example, electronic system 101 may provideaddress buffer 114 with the address for cell 112-11 of array 110A.Address buffer 114 identifies word line WL-1 for memory cell 112-11 torow decoder 116A. Row decoder 116A selectively activates word line WL-1to activate access transistor 130-1j of each memory cell 112-1j that isconnected to word line WL-1. Column decoder 118 selects bit lines BL-1for memory cell 112-11. For a write operation, data received byinput/output circuitry is coupled to bit lines BL-1 and through theaccess transistor 130-11 to charge or discharge storage capacitor 132-11of memory cell 112-11 to represent binary data. For a read operation,bit line BL-1 of array 110A is equilibrated with bit line BL-1 of array110B. Data stored in memory cell 112-11, as represented by the charge onits storage capacitor 132-11, is coupled to bit line BL-1 of array 110A.The difference in charge in bit lines BL-1 of array 110A and bit lineBL-1 of array 110B is amplified, and a corresponding voltage level isprovided to the input/output circuits.

FIGS. 2 through 4 illustrate an embodiment of a memory cell with avertical transistor and trench capacitor for use, for example, in memorydevice 100 of FIG. 1. Specifically, FIG. 2 is a plan view of a layout ofa number of memory cells indicated generally at 202A through 202D inarray 200. FIG. 2 depicts only four memory cells. It is understood,however, that array 200 may include a larger number of memory cells eventhough only four are depicted here.

Each memory cell is constructed in a similar manner. Thus, only memorycell 202D in FIG. 3 is described herein in detail. Memory cell 202Dincludes pillar 204 of single crystal semiconductor material, e.g.,silicon that is divided into first source/drain region 206, body region208, and second source/drain region 210 to form access transistor 211.Pillar 204 extends vertically outward from substrate 212, for example,p− silicon. First source/drain region 206 and second source/drain region210 each comprise, for example, n+ silicon and body region 208 comprisesp− silicon.

Word line 212 passes body region 208 of access transistor 211 inisolation trench 214. Word line 212 is separated from body region 208 ofaccess transistor 204 by gate oxide 216 such that the portion of wordline 212 adjacent to body region 208 operates as a gate for accesstransistor 211. Word line 212 may comprise, for example, n+ poly-siliconmaterial that is deposited in isolation trench 214 using a techniquesuch that word line 212 is less than a minimum feature size, F, for thelithographic technique used to fabricate array 200. Cell 202D is coupledin a column with cell 202A by bit line 218.

Memory cell 202D also includes storage capacitor 219 for storing data inthe cell. A first plate of capacitor 219 for memory cell 202D isintegral with second source/drain region 210 of access transistor 211.Thus, memory cell 202D may be more easily realizable when compared toconventional vertical transistors since there is no need for a contactbetween second source/drain region 210 and capacitor 219. Second plate220 of capacitor 219 is common to all of the capacitors of array 200.Second plate 220 comprises a mesh or grid of n+ poly-silicon formed indeep trenches that surrounds at least a portion of second source/drainregion 210 of each pillar 204A through 204D. Second plate 220 isgrounded by contact with substrate 212 underneath the trenches. Secondplate 220 is separated from source/drain region 210 by gate oxide 222.

With this construction for memory cell 202D, access transistor 211 islike a silicon on insulator device. Three sides of the transistor areinsulated by thick oxide in the shallow trench. If the doping in pillar204 is low and the width of the post is submicron, then body region 208can act as a “fully-depleted” silicon on insulator transistor with nobody or substrate to contact. This is desirable to avoid floating bodyeffects in silicon on insulated transistors and is achievable due to theuse of sub-micron dimensions in access transistor 211.

FIG. 4 is a schematic diagram that illustrates an effective circuitdiagram for the embodiment of FIGS. 2 and 3. It is noted that storagecapacitor 219 formed by second source/drain region 210 and second plate220 is depicted as four separate capacitors. This represents that thesecond plate 220 surrounds second source/drain region 210 whichincreases the charge storage capacitance and stored charge for thememory cell. It is also noted that second plate 220 is maintained at aconstant potential, e.g., ground potential.

As shown in FIG. 2, the memory cells of array 200 are four-squarefeature (4F²) memory cells. Using cell 202D as an example, the surfacearea of cell 202D is calculated based on linear dimensions in the bitline and word line directions. In the bit line direction, the distancefrom one edge of cell 202D to a common edge of adjacent cell 202A isapproximately 2 minimum feature sizes (2F). In the word line direction,the dimension is taken from the midpoint of isolation trenches on eitherside of memory cell 202D. Again, this is approximately two minimumfeature sizes (2F). Thus, the size of the cell is 4F². This size is muchsmaller than the current cells with stacked capacitors or trenchedcapacitors.

FIGS. 5A through 5J illustrate one embodiment of a process forfabricating an array of memory cells, indicated generally at 299,according to the teachings of the present invention. In this example,dimensions are given that are appropriate to a 0.2 micrometerlithographic image size. For other image sizes, the vertical dimensionscan be scaled accordingly.

As shown in FIG. 5A, the method begins with substrate 300. Substrate 300comprises, for example, a P-type silicon wafer, layer of P− siliconmaterial, or other appropriate substrate material. Layer 302 is formed,for example, by epitaxial growth outwardly from layer 300. Layer 302comprises single crystalline N+ silicon that is approximately 3.5micrometers thick. Layer 304 is formed outwardly from layer 302 byepitaxial growth of single crystalline P− silicon of approximately 0.5microns. Layer 306 is formed by ion implantation of donor dopant intolayer 304 such that layer 306 comprises single crystalline N+ siliconwith a depth of approximately 0.1 microns.

A thin layer of silicon dioxide (SiO₂), referred to as pad oxide 308, isdeposited or grown on layer 306. Pad oxide 308 has a thickness ofapproximately 10 nanometers. A layer of silicon nitride (Si₃N₄),referred to as pad nitride 310, is deposited on pad oxide 308. Padnitride 310 has a thickness of approximately 200 nanometers.

Photo resist layer 312 is deposited outwardly from layer 310. Photoresist layer 312 is patterned with a mask to define openings 314 inlayer 312 to be used in selective etching. As shown in FIG. 5B, columnisolation trenches 316 are etched through openings 314 in photo resistlayer 312 in a direction parallel to which the bit lines will be formed.Column isolation trenches 316 extend down through nitride layer 310,oxide layer 308, N+ layer 306, P− layer 304, N+ layer 302, and intosubstrate 300.

A thin thermal protective oxide layer 318 is grown on exposed surfacesof substrate 300 and layers 302, 304, and 306. Layer 318 is used toprotect substrate 300 and layers 302, 304 and 306 during subsequentprocess step.

A layer of intrinsic poly-silicon 320 is deposited by chemical vapordeposition (CVD) to fill column isolation trenches 316. Layer 320 isetched by reactive ion etching (RIE) such that layer 320 is recessedbelow a top of layer 302. Layer 322 of silicon nitride (Si₃N₄) isdeposited by, for example, chemical vapor deposition to fill trenches316. Layer 322 is planarized back to a level of layer 310 using, forexample, chemical mechanical polishing (CMP) or other suitableplanarization technique to produce the structure shown in FIG. 5C.

As shown in FIG. 5D, layer 324 of photo resist material is depositedoutwardly from nitride layers 322 and 310. Layer 324 is exposed througha mask to define openings 326 in layer 324. Openings 326 are orthogonalto trenches 316 that were filled by intrinsic poly-silicon layer 320 andnitride layer 322. Next, nitride layers 310 and 322 are etched to adepth sufficient to expose a working surface 328 of layer 306. It isnoted that at this point layer 320 of intrinsic poly-silicon is stillcovered by a portion of nitride layer 322.

As shown in FIG. 5E, the portion of layers 306, 304, and 302 that areexposed in openings 326 are selectively etched down to a distanceapproximately equal to column isolation trenches 316. A thin thermalprotective oxide is grown on the exposed silicon of layers 302, 304 and306 as well as an exposed upper surface of layer 300. This oxide layeris labeled 330 in FIG. 5E.

As shown in FIG. 5F, the remaining nitride layer 322 exposed in openings326 is directionally etched to expose layer of intrinsic poly-silicon320. It is noted that nitride layer 322 and nitride layer 310 remainintact under the photo resist layer 324. Layer of intrinsic poly-silicon320 is next isotropically etched using a silicon etchant which does notattack oxide or nitride layers. Next, an isotropic oxide etch isperformed to remove all exposed thin oxide. The photo resist layer 324is removed. At this point, the method has produced the structure shownin FIG. 5G. This structure includes a nitride bridge formed from nitridelayers 310 and 322 that extends orthogonal to column isolation trenches316 and covers the remaining portions of layers 302,304, and 306. Thestructure also includes row isolation trenches 332 that are orthogonalto column isolation trenches 316. The structure of FIG. 5G also includespillars 334A through 334D of single crystal silicon material. Pillars334A through 334D form the basis for individual memory cells for thememory array formed by the process.

An optional metal contact 336 may be formed by, for example, depositionof a collimated refractory metal deposition, e.g., titanium, tungsten,or a similar refractory metal. This provides an ohmic metal contact fora capacitor plate on a surface 335 of substrate 300.

Dielectric layer 338 is deposited or grown on sidewalls of layer 302 ofpillars 334A through 334D. Layer 338 acts as the dielectric for thestorage capacitors of array 299 of memory cells. If contact 336 waspreviously deposited on a surface of substrate 300, dielectric layer 338should be directionally etched to clear dielectric material from thebottom of row isolation trench 332.

Next, a common plate for all of the memory cells of array 299 is formedby a chemical vapor deposition of N+ poly-silicon or other appropriaterefractory conductor in column isolation trenches 316 and row isolationtrenches 322. In this manner, conductor mesh or grid 340 is formed so asto surround each of pillars 334A through 334D. Mesh 340 is planarizedand etched back to a level approximately at the bottom of the nitridebridge formed by nitride layers 322 and 310 as shown in FIG. 5H. Anadditional etch is performed to remove any remaining exposed capacitordielectric of layer 338 from the sides of semiconductor pillars 334Athrough 334D.

Referring to FIG. 5I, row isolation trenches 332 are filled with anoxide material by chemical vapor deposition that fills row isolationtrenches 332 with oxide layer 342. Oxide layer 342 is planarized using,for example, a chemical mechanical polishing technique or otherappropriate planarization technique to bring oxide layer 342 coplanarwith the top surface of nitride layer 310.

Photo resist layer 344 is deposited and patterned using a mask to definestripes in the direction of row isolation trenches 332 so as to definethe location of word lines for array 299. Oxide layer 342 is selectivelyetched to a depth approximately at the top of layer 302. Gate oxidelayer 346 is grown or deposited on sidewalls of pillars 334A through334D to form a gate oxide for the transistors for each memory cell. Amaterial such as N+ poly-silicon is deposited by, for example, chemicalvapor deposition (CVD) into the remaining portion of row isolationtrench 332 in order to form word lines 348. Word lines 348 areplanarized and recessed to a depth at least to the top of siliconpillars 334A through 334D. It is noted that by so forming word line 348,word line 348 is “sub-lithographic” in that the width of word line 348in the bit line direction is less than F, the minimum feature size forthe lithographic process used to form array 299. Photo resist layer 344is removed. An oxide cap layer is deposited by chemical vapor depositionand conventional techniques are used to add bit lines (BL) that contactlayers 306 of semiconductor pillars 334A through 334D in order toproduce array 299 shown in FIG. 5J. Array 299 includes memory cells 350Athrough 350D formed by pillars 334A through 334D, respectively, andsurrounding mesh 340.

Conclusion

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiment shown. This application isintended to cover any adaptations or variations of the presentinvention. For example, the semiconductor materials specified in thisapplication are given by way of example and not by way of limitation.Other appropriate material can be substituted without departing from thespirit and scope of the invention.

What is claimed is:
 1. A memory cell, comprising: an access transistorformed in a pillar of single crystal semiconductor material, thetransistor having first and second source/drain regions and a bodyregion that are vertically aligned, and a single, sub-lithographic gateof the access transistor is formed in a trench along only one side ofthe pillar that is adjacent to the body region wherein only one gate ispresent between every each adjacent pillar; a trench capacitor, whereinthe trench capacitor includes a first plate that is formed integral withthe second source/drain region of the access transistor and a secondplate that is disposed adjacent to the first plate and separated fromthe first plate by a gate oxide; and wherein the second plate of thetrench capacitor surrounds the second source drain region.
 2. The memorycell of claim 1, wherein the second plate comprises poly-silicon.
 3. Thememory cell of claim 1, and further comprising an ohmic contact thatcouples the second plate to a layer of semiconductor material.
 4. Amemory device, comprising: an array of memory cells, each cell includinga vertical access transistor formed of a semiconductor pillar thatextends outwardly from a substrate with body and first and secondsource/drain regions, a trench capacitor, and a single sub-lithographicgate disposed adjacent to only one side of the pillar adjacent to thebody region, wherein only one gate is present between every eachadjacent pillar, wherein a first plate of the trench capacitor isintegral with the second source/drain region and a second plate of thecapacitor is disposed adjacent to the first plate and wherein the secondplate of the capacitor surrounds the second source/drain region of theaccess transistor; a number of bit lines that are each selectivelycoupled to a number of the memory cells at the second source/drainregion of the access transistor so as to form columns of memory cells; anumber of word lines, each word line disposed orthogonally to the bitlines with a single word line in each of a number of trenches betweenrows of the memory cells; wherein each single word line addresses gatesof access transistors on a first side of a trench, and is isolated fromaccess transistors on a second side of the trench; and a row decodercoupled to the word lines and a column decoder coupled to the bit linesso as to selectively access the cells of the array.
 5. The memory deviceof claim 4, wherein the pillars extend outwardly from a semiconductorportion of the substrate.
 6. The memory device of claim 4, wherein thesecond plate of the trench capacitor is maintained at approximatelyground potential.
 7. The memory device of claim 4, wherein the secondplate of the trench capacitor comprises poly-silicon that is maintainedat a constant potential.
 8. The memory device of claim 4, wherein thepillar has a sub-micron width so as to allow substantially fulldepletion of the body region.
 9. The memory device of claim 4, whereinthe word lines are sub-lithographic.
 10. A memory array comprising: anarray of memory cells, each memory cell including an access transistorhaving a body and first and second source/drain regions verticallyformed outwardly from a substrate in a single crystalline semiconductorpillar and a single sub-lithographic gate disposed adjacent to only oneside of the transistor, wherein only one gate is present between everyeach adjacent pillar, a trench capacitor, wherein a first plate of thetrench capacitor is integral with the second source/drain region of theaccess transistor and the second plate of the trench capacitor surroundsthe second source/drain region of the access transistor, wherein asingle trench is associated with each memory cell along a directionsubstantially orthogonal to the single side of the transistor; a numberof word lines interconnecting gates of selected access transistors so asto form a number of rows of memory cells; a number of first isolationtrenches separating adjacent rows of memory cells, each isolation trenchhousing a word line; and a number of second isolation trenches, eachsubstantially orthogonal to the first isolation trenches and interposedbetween adjacent memory cells so as to form a number of columns of thearray.
 11. The memory array of claim 10, wherein the gates of the accesstransistors are each formed integral with one of the word lines.
 12. Thememory array of claim 10, wherein the pillars extend outwardly from asemiconductor portion of the substrate.
 13. The memory array of claim10, wherein the second plate of the trench capacitor comprisespoly-silicon that is maintained at a constant potential.
 14. The memoryarray of claim 10, wherein the word lines have a width that is less thanthe minimum feature size, F, of the lithographic process.
 15. A memorycell, comprising: an access transistor formed in a pillar of singlecrystal semiconductor material, the transistor having first and secondsource/drain regions and a body region that are vertically aligned, anda single, sub-lithographic gate of the access transistor is formed in atrench along only one side of the pillar that is adjacent to the bodyregion, wherein only one gate is present between every each adjacentpillar; a trench capacitor, wherein the trench capacitor includes afirst plate that is formed integral with the second source/drain regionof the access transistor and a second plate that is disposed adjacent tothe first plate and separated from the first plate by a gate oxide; anohmic contact that couples the second plate to a layer of semiconductormaterial; and wherein the second plate of the trench capacitor surroundsthe second source drain region.
 16. The memory cell of claim 15, whereinthe second plate comprises poly-silicon.
 17. The memory cell of claim15, wherein the ohmic contact includes a refractory metal.
 18. A memorydevice, comprising: an array of memory cells, each cell including avertical access transistor formed of a semiconductor pillar that extendsoutwardly from a substrate with body and first and second source/drainregions, a trench capacitor, and a single sub-lithographic gate disposedadjacent to only one side of the pillar adjacent to the body region,wherein only one gate is present between every each adjacent pillar,wherein a first plate of the trench capacitor is integral with thesecond source/drain region and a second plate of the capacitor isdisposed adjacent to the first plate and wherein the second plate of thecapacitor surrounds the second source/drain region of the accesstransistor; an ohmic contact that couples the second plate to a layer ofsemiconductor material; a number of bit lines that are each selectivelycoupled to a number of the memory cells at the second source/drainregion of the access transistor so as to form columns of memory cells; anumber of word lines, each word line disposed orthogonally to the bitlines with a single word line in each of a number of trenches betweenrows of the memory cells; wherein each single word line addresses gatesof access transistors on a first side of a trench, and is isolated fromaccess transistors on a second side of the trench; and a row decodercoupled to the word lines and a column decoder coupled to the bit linesso as to selectively access the cells of the array.
 19. The memorydevice of claim 18, wherein the pillars extend outwardly from asemiconductor portion of the substrate.
 20. The memory device of claim18, wherein the second plate of the trench capacitor is maintained atapproximately ground potential.
 21. The memory device of claim 18,wherein the second plate of the trench capacitor comprises poly-siliconthat is maintained at a constant potential.
 22. The memory device ofclaim 18, wherein the pillar has a sub-micron width so as to allowsubstantially full depletion of the body region.
 23. The memory deviceof claim 18, wherein the word lines are sub-lithographic.
 24. A memoryarray comprising: an array of memory cells, each memory cell includingan access transistor having a body and first and second source/drainregions vertically formed outwardly from a substrate in a singlecrystalline semiconductor pillar and a single sub-lithographic gatedisposed adjacent to only one side of the transistor, wherein only onegate is present between every each adjacent pillar, a trench capacitor,wherein a first plate of the trench capacitor is integral with thesecond source/drain region of the access transistor and the second plateof the trench capacitor surrounds the second source/drain region of theaccess transistor, wherein a single trench is associated with eachmemory cell along a direction substantially orthogonal to the singleside of the transistor; an ohmic contact that couples the second plateto a layer of semiconductor material; a number of word linesinterconnecting gates of selected access transistors so as to form anumber of rows of memory cells; a number of first isolation trenchesseparating adjacent rows of memory cells, each isolation trench housinga word line; and a number of second isolation trenches, eachsubstantially orthogonal to the first isolation trenches and interposedbetween adjacent memory cells so as to form a number of columns of thearray.
 25. The memory array of claim 24, wherein the gates of the accesstransistors are each formed integral with one of the word lines.
 26. Thememory array of claim 24, wherein the pillars extend outwardly from asemiconductor portion of the substrate.
 27. A memory cell, comprising:an access transistor formed in a pillar of single crystal semiconductormaterial, the transistor having first and second source/drain regionsand a body region that are vertically aligned, and a single,sub-lithographic gate of the access transistor is formed in a trenchalong only one side of the pillar that is adjacent to the body region,wherein only one gate is present between every each adjacent pillar; atrench capacitor, wherein the trench capacitor includes a first platethat is formed integral with the second source/drain region of theaccess transistor and a second polysilicon plate that is disposedadjacent to the first plate and separated from the first plate by a gateoxide; an ohmic contact that couples the second plate to a layer ofsemiconductor material; and wherein the second polysilicon plate of thetrench capacitor surrounds the second source drain region.
 28. Thememory cell of claim 27, wherein the ohmic contact includes a refractorymetal.